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Fumio Takeuchi
Fumio Takeuchi
Toshiba
LDMOS
Voltage
Electronic engineering
Engineering
Electrical engineering
3
Papers
8
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0
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Study of Unique ESD Tolerance Dependence on Backgate Ratio for RESURF LDMOS with Rated Voltage Variation
2021
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Kanako Komatsu
Koichi Ozaki
Fumio Takeuchi
Daisuke Shinohara
Tomoko Kinoshita
Yoshiaki Ishii
Toshihiro Sakamoto
Fumitomo Matsuoka
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HBM robustness optimization of fully isolated Nch-LDMOS for negative input voltage using unique index parameter
2017
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Fumio Takeuchi
Hirofumi Nagano
Toshihiro Sakamoto
Koji Kimura
Fumitomo Matsuoka
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0.13μm CMOS/DMOS platform technology with novel 8V/9V LDMOS for low voltage high-frequency DC-DC converters
2010
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Tomoko Matsudai
Kumiko Sato
Norio Yasuhara
Hiroshi Saito
Koichi Endo
Fumio Takeuchi
Masaaki Yamamoto
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Citations (5)
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