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Edmund Banghart
Edmund Banghart
GlobalFoundries
Electronic engineering
Engineering
CMOS
Transistor
Optoelectronics
5
Papers
10
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Combine TEM with TCAD Simulation - A Novel Approach in Failure Analysis
2021
Microscopy and Microanalysis
Yu Zhang
Satish Kodali
Edmund Banghart
Travis Mitchell
Frieder Baumann
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Yield and Failure Analysis of FinFET Source to Drain Leakage in 12nm Technology
2020
Felix Beaudoin
Satish Kodali
Rohan Deshpande
Wayne Zhao
Edmund Banghart
Rinus T.P. Lee
Thirukumaran Mahalingam
Nuh Yuksek
Lu Yuan
Wang Tao
Lillian Li
Sushruth Goud Perumalla
Shweta Arora
Trejo Rust
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Turning Logic Transistors into Secure, Multi-Time Programmable, Embedded Non-Volatile Memory Elements for 14 nm FINFET Technologies and Beyond
2019
VLSIT | Symposium on VLSI Technology
Faraz Khan
Dan Moy
D. Anand
E.H. Schroeder
Robert Katz
L. Jiang
Edmund Banghart
N. Robson
Toshiaki Kirihata
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Citations (3)
Design Optimization and Modeling of Charge Trap Transistors (CTTs) in 14 nm FinFET Technologies
2019
IEEE Electron Device Letters
Faraz Khan
Min Soo Han
Dan Moy
Robert Katz
L. Jiang
Edmund Banghart
N. Robson
Toshiaki Kirihata
Jason C. S. Woo
Subramanian S. Iyer
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TCAD Simulation on FinFET n-type Power Device HCI Reliability Improvement.
2019
IRPS | International Reliability Physics Symposium
Baofu Zhu
E. M. Bazizi
J. H. M. Tng
Z. Li
Edmund Banghart
M. K. Hassan
Y. Hu
D. Zhou
Dongil Choi
L. Qin
X. Wan
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Citations (2)
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