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Niccolò Castellani

Polytechnic University of Milan

21

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151

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Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operations.

2022 IRPS | International Reliability Physics Symposium
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Hardware calibrated learning to compensate heterogeneity in analog RRAM-based Spiking Neural Networks.

2022 CoRR
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Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance

2018 IRPS | International Reliability Physics Symposium
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Investigation of the Turn-ON of T-RAM Cells Under Transient Conditions

2015 IEEE Transactions on Electron Devices
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TCAD modeling of performance and reliability of nano-scale memory devices

2014
- Niccolò Castellani
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Data regeneration and disturb immunity of T-RAM cells

2014 ESSDERC | European Solid-State Device Research Conference
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Working Principles of a DRAM Cell Based on Gated-Thyristor Bistability

2014 IEEE Electron Device Letters
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Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method

2013 Journal of Computational Electronics
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Accuracy and Issues of the Spectroscopic Analysis of RTN Traps in Nanoscale MOSFETs

2013 IEEE Transactions on Electron Devices
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Dynamic Analysis of Current-Voltage Characteristics of Nanoscale Gated-Thyristors

2013 IEEE Electron Device Letters
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Citations (11)