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Win-San Khwa
Win-San Khwa
Electronic engineering
Phase-change memory
resistance drift
Computer science
Scalability
4
Papers
39
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Sidewall electrode TiO x /TiO x N y resistive random access memory with excellent memory window control and reliability using plasma oxidation and a novel degradation-detecting writing algorithm
2017
Japanese Journal of Applied Physics
Erh-Kun Lai
Dai-Ying Lee
Jau-Yi Wu
Ming-Hsiu Lee
Win-San Khwa
Yu-Hsuan Lin
Wei-Chen Chen
Kuang-Hao Chiang
Sheng-Fu Horng
Jeng Gong
Hsiang-Lan Lung
Kuang Yeu Hsieh
Chih-Yuan Lu
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A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over $100\times $ for Storage Class Memory Applications
2017
IEEE Journal of Solid-state Circuits
Win-San Khwa
Meng-Fan Chang
Jau-Yi Wu
Ming-Hsiu Lee
Tzu-Hsiang Su
Keng-Hao Yang
Tien-Fu Chen
Tien-Yen Wang
Hsiang-Pang Li
M. BrightSky
SangBum Kim
Hsiang-Lam Lung
Chung H. Lam
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Citations (9)
A Retention-Aware Multilevel Cell Phase Change Memory Program Evaluation Metric
2016
IEEE Electron Device Letters
Win-San Khwa
Meng-Fan Chang
Jau-Yi Wu
Ming-Hsiu Lee
Tzu-Hsiang Su
Tien-Yen Wang
Hsiang-Pang Li
M. BrightSky
SangBum Kim
Hsiang-Lan Lung
Chung H. Lam
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Citations (3)
7.3 A resistance-drift compensation scheme to reduce MLC PCM raw BER by over 100× for storage-class memory applications
2016
ISSCC | International Solid-State Circuits Conference
Win-San Khwa
Meng-Fan Chang
Jau-Yi Wu
Ming-Hsiu Lee
Tzu-Hsiang Su
Keng-Hao Yang
Tien-Fu Chen
Tien-Yen Wang
Hsiang-Pang Li
M. BrightSky
SangBum Kim
Hsiang-Lam Lung
Chung H. Lam
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Citations (27)
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