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Byung-Soon Choi

Samsung

6

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50

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A 256MB synchronous-burst DDR SRAM with hierarchical bit-line architecture for mobile applications

2005 ISSCC | International Solid-State Circuits Conference
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A 3.3 V 16 Mb nonvolatile virtual DRAM using a NAND flash memory technology

1997 ISSCC | International Solid-State Circuits Conference
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A 3.3-V single power supply 16-Mb nonvolatile virtual DRAM using a NAND flash memory technology

1997 IEEE Journal of Solid-state Circuits
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SP 24.2: A 3.3V 16Mb Non-Volatile Virtual DRAM using a NAND Flash Memory Technology

1997 International Solid-State Circuits Conference
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