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Tung-Wei Chi

Industrial Technology Research Institute

14

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Stress and Defect Distribution of Thick GaN Film Homoepitaxially Regrown on Free-Standing GaN by Hydride Vapor Phase Epitaxy

2010 Japanese Journal of Applied Physics
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Comparison of different template structures for high quality and self-separation thick GaN growth

2010
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Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching

2010 Journal of Crystal Growth
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Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure

2009 Journal of Crystal Growth
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Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence.

2008 Ultramicroscopy
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Investigations on highly stable thermal characteristics of a dilute In0.2Ga0.8AsSb /GaAs doped-channel field-effect transistor

2008 Semiconductor Science and Technology
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Triangular Extended Microtunnels in GaN Prepared by Selective Crystallographic Wet Chemical Etching

2008 Journal of The Electrochemical Society
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Highly Stable Thermal Characteristics of a Novel In0.3Ga0.7As0.99N0.01(Sb)/GaAs High-Electron-Mobility Transistor

2007 Japanese Journal of Applied Physics
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Micro-Raman spectroscopy of a single freestanding GaN nanorod grown by molecular beam epitaxy

2007 Applied Physics Letters
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Highly-Stable Thermal Characteristics of a High Electron-Mobility Transistor with a Novel In0.3Ga0.7As0.99N0.01(Sb) Dilute Channel

2006 The Japan Society of Applied Physics
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