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A. Naem

6

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124

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Integrated passives for a DECT VCO

2000 The International journal of microcircuits and electronic packaging
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Investigation of intrinsic transistor performance of advanced CMOS devices with 2.5 nm NO gate oxides

1999 IEDM | International Electron Devices Meeting
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Dopant Depth Profiling by Anodic Sectioning Using 0.1 M HCl Electrolyte

1996 Journal of The Electrochemical Society
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Modeling arsenic redistribution during titanium silicide formation

1988 IEDM | International Electron Devices Meeting
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