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Kurt G. Eyink
Kurt G. Eyink
Optoelectronics
Band gap
Materials science
Quantum dot
Strain (chemistry)
7
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19
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Band gap formation in graphene by in-situ doping
2011
Applied Physics Letters
Jeongho Park
W.C. Mitchel
Gail J. Brown
Said Elhamri
Lawrence Grazulis
H. E. Smith
Shanee D. Pacley
John Boeckl
Kurt G. Eyink
Shin Mou
David H. Tomich
John E. Hoelscher
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Citations (9)
Size, strain and band offset engineering in GaAs(Sb)(N)-capped InAs quantum dots for 1.3 – 1.55 μm emitters
2011
Jm José Maria Ulloa
Moral, del, M.
M Montes
M Murat Bozkurt
Pm Paul Koenraad
A. Guzman
A. Hierro
Kurt G. Eyink
Frank Szmulowicz
Diana L Huffaker
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Size, strain and band offset engineering in GaAs(Sb)(N)-capped InAs quantum dots for 1.3 – 1.55 μm emitters
2011
Jm José Maria Ulloa
Moral, del, M.
M Montes
M Murat Bozkurt
Pm Paul Koenraad
A. Guzman
A. Hierro
Kurt G. Eyink
Frank Szmulowicz
Diana L Huffaker
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Microstructural changes in MBE growth of LT-GaAs observed by in- situ ellipsometry
1995
Kurt G. Eyink
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