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Dagmar Gregušová
Dagmar Gregušová
Heterojunction
Analytical chemistry
Optoelectronics
MOSFET
Metalorganic vapour phase epitaxy
2
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45
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Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition
2010
Journal of Applied Physics
Dagmar Gregušová
R. Stoklas
Ch. Mizue
Yujin Hori
Jozef Novák
Tamotsu Hashizume
Peter Kordoš
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RF Performance of InAlN/GaN HFETs and MOSHFETs With $f_{T} \times L_{G}$ up to 21 $\hbox{GHz}\cdot \mu\hbox{m}$
2010
IEEE Electron Device Letters
Peter Kordoš
Martin Mikulics
Alfred Fox
Dagmar Gregušová
K. Čičo
Jean-Francois Carlin
Nicolas Grandjean
Jozef Novák
Karol Fröhlich
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