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J. E. Burgess
J. E. Burgess
University of Melbourne
Ion implantation
Photoluminescence
Annealing (metallurgy)
Physics
Silicon
3
Papers
5
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0
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Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon
2012
Journal of Applied Physics
B. C. Johnson
B. J. Villis
J. E. Burgess
N. Stavrias
J. C. McCallum
Supakit Charnvanichborikarn
J. Wong-Leung
Chennupati Jagadish
James Williams
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Citations (3)
Effect of boron on formation of interstitial‐related luminescence centres in ion implanted silicon
2011
Physica Status Solidi (a)
J. C. McCallum
B. J. Villis
B. C. Johnson
N. Stavrias
J. E. Burgess
Supakit Charnvanichborikarn
J. Wong-Leung
James Williams
Chennupati Jagadish
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Comparison between implanted boron and phosphorus in silicon wafers.
2010
COMMAD | Conference on Optoelectronic and Microelectronic Materials and Devices
J. E. Burgess
B. C. Johnson
B. J. Villis
J. C. McCallum
Supakit Charnvanichborikarn
J. Wong-Leung
James Williams
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Citations (1)
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