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Takahiro Morikawa

Hitachi

4

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14

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1.2 kV SiC SBD-embedded MOSFETs with extension structure and titanium-based single contact

2019 Japanese Journal of Applied Physics
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Device Design Consideration for Robust SiC VDMOSFET With Self-Aligned Channels Formed by Tilted Implantation

2019 IEEE Transactions on Electron Devices
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Analysis of Degradation Phenomena in Bipolar Degradation Screening Process for SiC-MOSFETs

2019 ISPSD | International Symposium on Power Semiconductor Devices and IC's
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55μA GexTe1-x/Sb2Te3超格子トポロジカルスイッチングランダムアクセスメモリ(TRAM)とGe-Te及びSb-Te構造における原子配列の研究

2014 IEDM | International Electron Devices Meeting
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