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W.H. Seet
W.H. Seet
GlobalFoundries
Engineering
Electronic engineering
Radio frequency
Logic gate
Transistor
2
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9
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22nm FD-SOI Technology with Back-biasing Capability Offers Excellent Performance for Enabling Efficient, Ultra-low Power Analog and RF/Millimeter-Wave Designs
2019
RFIC | Radio Frequency Integrated Circuits Symposium
S.N. Ong
L.H.K. Chan
Kok Wai Chew
C.K. Lim
W. L. Oo
Abdellatif Bellaouar
Chi Zhang
W.H. Chow
T. Chen
R. Rassel
Jen Shuang Wong
C.W.F. Wan
J. Kim
W.H. Seet
David L. Harame
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Citations (7)
22nm Fully-Depleted SOI High Frequency Noise Modeling up to 90GHz Enabling Ultra Low Noise Millimetre-Wave LNA Design
2019
RFIC | Radio Frequency Integrated Circuits Symposium
L.H.K. Chan
S.N. Ong
W. L. Oo
Kok Wai Chew
Chi Zhang
Abdellatif Bellaouar
W.H. Chow
T. Chen
R. Rassel
Jen Shuang Wong
C.K. Lim
C.W.F. Wan
J. Kim
W.H. Seet
David L. Harame
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Citations (2)
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