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A. Schulman

University of Turku

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Electron Doping Effect in the Resistive Switching Properties of Al/Gd1-xCaxMnO3/Au Memristor Devices.

2021 ACS Applied Materials & Interfaces
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Tuned AFM-FM coupling by the formation of vacancy complex in Gd0.6Ca0.4MnO3 thin film lattice.

2021 Journal of Physics: Condensed Matter
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Transport properties of resistive switching in Ag/Pr0.6Ca0.4MnO3/Al thin film structures

2019 Journal of Alloys and Compounds
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