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Inokuma Takao
Inokuma Takao
Diamond
MOSFET
Annealing (metallurgy)
Electronic engineering
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2
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3000°Cでタンタルフィラメントを用いたホットフィラメント化学蒸着による単結晶ダイヤモンド(100)膜の高速成長【JST・京大機械翻訳】
2019
Physica Status Solidi A-applications and Materials Science
Tabakoya Taira
Kanada Shohei
Wakui Yusuke
Takamori Yue
Yamada Tatsuki
Nagai Masatsugu
Kojima Yoshiyasu
Ariyada Osamu
Yamasaki Satoshi
E Nebel Christoph
Matsumoto Tsubasa
Inokuma Takao
Tokuda Norio
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Inversion channel diamond MOSFET -- Formation of diamond MOS interface by wet annealing
2018
Matsumoto Tsubasa
Kato Hiromitsu
Makino Toshiharu
Ogura Masahiko
Takeuchi Daisuke
Inokuma Takao
Yamasaki Satoshi
Tokuda Norio
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