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V Mehandzhiev
V Mehandzhiev
Georgi Nadjakov Institute of Solid State Physics
Materials science
Atomic layer deposition
Chemical engineering
Thin film
Optoelectronics
6
Papers
16
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Optimization of AlN films grown by atomic layer deposition
2021
M. Beshkova
B S Blagoev
V Mehandzhiev
R. Yakimova
I. Avramova
P. Terziyska
D. Kovacheva
V. Strijkova
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Optimization of ALD grown Ni-, Co- and Fe-doped ZnO films
2020
B. Blagoev
P. Terziyska
V Mehandzhiev
P. Tzvetkov
Daniela Kovacheva
I. Avramova
T. Ivanova
K. Gesheva
A. Paskaleva
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Investigation of the structural, optical and piezoelectric properties of ALD ZnO films on PEN substrates
2018
B S Blagoev
Mariya Aleksandrova
P Terziyska
P. Tzvetkov
Daniela Kovacheva
G. Kolev
V Mehandzhiev
Krassimir Denishev
D. Dimitrov
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Electron transport in Al-doped ZnO nanolayers obtained by atomic layer deposition
2016
B S Blagoev
D. Dimitrov
V Mehandzhiev
Daniela Kovacheva
P Terziyska
J Pavlic
K Lovchinov
E Mateev
J Leclercq
P. Sveshtarov
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Citations (10)
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