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J-L Rouvière

French Alternative Energies and Atomic Energy Commission

20

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2135

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The evolution of the fraction of Er ions sensitized by Si nanostructures in silicon-rich silicon oxide thin films

2009 Nanotechnology
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Improved precision in strain measurement using nanobeam electron diffraction

2009 Applied Physics Letters
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Theoretical discussions on the geometrical phase analysis

2005 Ultramicroscopy
- J-L Rouvière
- E. Sarigiannidou
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Citations (133)
Preferential nucleation of GaN quantum dots at the edge of AlN threading dislocations

1999 Applied Physics Letters
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Low temperature sapphire nitridation: A clue to optimize GaN layers grown by molecular beam epitaxy

1999 Journal of Applied Physics
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Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy

1999 Applied Physics Letters
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Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect

1998 Physical Review B
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Growth kinetics and optical properties of self-organized GaN quantum dots

1998 Journal of Applied Physics
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Improved quality GaN grown by molecular beam epitaxy using In as a surfactant

1998 Applied Physics Letters
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Quantitative interfacial profiles in CdTe/Mn(Mg)Te heterostructures

1998 Journal of Applied Physics
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Citations (12)