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Z. Y. Zhao
Z. Y. Zhao
Varian Semiconductor
Materials science
Silicon
Carbon
carbon source
Schottky barrier
4
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7
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Schottky barrier height modulation with Aluminum segregation and pulsed laser anneal: A route for contact resistance reduction
2010
IWJT | International Workshop on Junction Technology
Shao-Ming Koh
Chee Mang Ng
Pan Liu
Zhi-Qiang Mo
Xincai Wang
Hongyu Zheng
Z. Y. Zhao
Naushad Variam
Todd Henry
Yuri Erokhin
Ganesh S. Samudra
Yee Chia Yeo
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Citations (1)
Channel-Proximate Silicon-Carbon Source/Drain Stressors for Performance Boost in Strained N-Channel Field-Effect Transistors
2009
The Japan Society of Applied Physics
Shao-Ming Koh
Chee Mang Ng
Z. Y. Zhao
Helen L. Maynard
Naushad Variam
Todd Henry
Yuri Erokhin
Ganesh S. Samudra
Yee Chia Yeo
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Carbon Profile Engineering for Silicon-Carbon Source/Drain Stressor Formed by Carbon Ion Implantation and Solid Phase Epitaxy
2009
The Japan Society of Applied Physics
Qian Zhou
Shao-Ming Koh
Z. Y. Zhao
T. Toh
Helen L. Maynard
Naushad Variam
Todd Henry
Yuri Erokhin
Yee Chia Yeo
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Silicon:Carbon Source/Drain Stressors: Integration of a Novel Nickel Aluminide-Silicide and Post-Solid-Phase-Epitaxy Anneal for Reduced Schottky-Barrier and Leakage
2009
Shao Ming Koh
Wei Jing Zhou
Rinus T. P. Lee
Mantavya Sinha
Chee Mang Ng
Z. Y. Zhao
Helen L. Maynard
Naushad Variam
Yuri Erokhin
Ganesh S. Samudra
Yee Chia Yeo
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Citations (5)
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