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S. R. Kurtz

Sandia National Laboratories

204

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5128

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PV Module Reliability: How Can We Improve It?

2015
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Time-resolved photoluminescence studies of In x Ga 1x As 1y N y

2014
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Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells

2013 Applied Physics Letters
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Optical enhancement of the open-circuit voltage in high quality GaAs solar cells

2013 Journal of Applied Physics
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Quantum-confined stark effect and polarization field in single quantum well InGaN/GaN LEDs.

2005 MRS Proceedings
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Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers.

2005
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Characterization of minority-carrier hole transport in nitride-based light-emitting diodes with optical and electrical time-resolved techniques.

2004 MRS Proceedings
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Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels

2004 Applied Physics Letters
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Electroreflectance studies of Stark shifts and polarization-induced electric fields in InGaN/GaN single quantum wells

2004 Journal of Applied Physics
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Optical and electrical step-recovery study of minority-carrier transport in an InGaN∕GaN quantum-well light-emitting diode grown on sapphire

2004 Applied Physics Letters
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