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Masato Noborio
Masato Noborio
Denso
Trench
Optoelectronics
MOSFET
Engineering
trench mosfet
4
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28
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Influences of coexisting O2 in H2O-annealing ambient on thermal oxidation kinetics and MOS interface properties on 4H–SiC (1–100)
2020
Materials Science in Semiconductor Processing
Qiao Chu
Masato Noborio
Sumera Shimizu
Koji Kita
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Suppression of Bipolar Degradation in Deep-P Encapsulated 4H-SiC Trench MOSFETs up to Ultra-High Current Density
2019
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Yasuhiro Ebihara
Junichi Uehara
Aiko Ichimura
Shuhei Mitani
Masato Noborio
Yuichi Takeuchi
Kazuhiro Tsuruta
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Deep-P encapsulated 4H-SiC trench MOSFETs with ultra low R on Q gd
2018
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Yasuhiro Ebihara
Aiko Ichimura
Shuhei Mitani
Masato Noborio
Yuichi Takeuchi
Shoji Mizuno
Toshimasa Yamamoto
Kazuhiro Tsuruta
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Citations (11)
4H-SiC Trench MOSFET with Ultra-Low On-Resistance by Using Miniaturization Technology
2018
Materials Science Forum
Aiko Ichimura
Yasuhiro Ebihara
Shuhei Mitani
Masato Noborio
Yuichi Takeuchi
Shoji Mizuno
Toshimasa Yamamoto
Kazuhiro Tsuruta
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Citations (14)
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