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Mostafa Elahy
Mostafa Elahy
Texas Instruments
Electronic engineering
Physics
Dram
MOSFET
Optoelectronics
5
Papers
219
Citations
0.01
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Trench transistor DRAM cell
1986
IEEE Electron Device Letters
H. Shichijo
Sanjay K. Banerjee
Satwinder Malhi
Gordon P. Pollack
William F. Richardson
D. M. Bordelon
R. H. Womack
Mostafa Elahy
C. P. Wang
James D. Gallia
H. E. Davis
Ashwin H. Shah
Pallab K. Chatterjee
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Citations (6)
Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon
1985
IEEE Transactions on Electron Devices
Satwinder Malhi
H. Shichijo
Sanjay K. Banerjee
Ravishankar Sundaresan
Mostafa Elahy
Gordon P. Pollack
William F. Richardson
Ashwin H. Shah
L.R. Hite
R. H. Womack
Pallab K. Chatterjee
H.W. Lam
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Citations (164)
A trench transistor cross-point DRAM cell
1985
IEDM | International Electron Devices Meeting
William F. Richardson
D. M. Bordelon
Gordon P. Pollack
Ashwin H. Shah
Satwinder Malhi
H. Shichijo
Sanjay K. Banerjee
Mostafa Elahy
R. H. Womack
C. P. Wang
James D. Gallia
H. E. Davis
Pallab K. Chatterjee
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Citations (44)
VB-5 comparison of accumulation and inversion mode LPCVD polysilicon MOSFET characteristics for memory applications
1984
IEEE Transactions on Electron Devices
Sanjay K. Banerjee
Mostafa Elahy
H. Shichijo
Gordon P. Pollack
William F. Richardson
Satwinder Malhi
Ashwin H. Shah
Pallab K. Chatterjee
H.W. Lam
R. H. Womack
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Citations (4)
Phase Transitions in Magnetic Graphite Intercalation Compounds.
1984
Mostafa Elahy
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Citations (1)
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