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Danshuo Liu

Peking University

7

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20

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Step-graded AlGaN vs superlattice: Role of strain relief layer in dynamic on-resistance degradation

2021 Applied Physics Express
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Investigation of carrier compensation traps in n−-GaN drift layer by high-temperature deep-level transient spectroscopy

2020 Applied Physics Letters
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Vacancy-engineering-induced dislocation inclination in III-nitrides on Si substrates

2020 Physical Review Materials
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