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A Strong
A Strong
IBM
Electronic engineering
Time-dependent gate oxide breakdown
Engineering
Voltage
Capacitor
3
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40
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Line edge roughness and spacing effect on low-k TDDB characteristics
2008
IRPS | International Reliability Physics Symposium
Fen Chen
J. R. Lloyd
Kaushik Chanda
Ravi Achanta
O. Bravo
A Strong
P. McLaughlin
Michael A. Shinosky
Sujatha Sankaran
Ephrem G. Gebreselasie
A. K. Stamper
Zhong-Xiang He
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Voltage Step Stress for 10 nm Oxides
2000
A Strong
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Characteristics of intrinsic breakdown of thin reoxidized nitride for trench capacitors
1997
Microelectronics Reliability
Ernest Y. Wu
C. Hwang
R.-P. Vollertsen
R. Kleinhenz
A Strong
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