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M. Ambri
M. Ambri
Heterojunction
Doping
Physics
Optoelectronics
Molecular beam epitaxy
2
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29
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Structural and optical properties of AlInAs/InP and GaPSb/InP type II interfaces
1996
Canadian Journal of Physics
M. Sacilotti
P. Abraham
M. Pitaval
M. Ambri
T. Benyattou
A. Tabata
M. A. Garcia Perez
P. Motisuke
Richard Landers
Jonder Morais
A. Le Corre
S. Loualiche
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Design and growth investigations of strained In/sub x/Ga/sub 1-x/As/InAlAs/InP heterostructures for high electron mobility transistor application
1996
IEEE Transactions on Electron Devices
V. Drouot
M. Gendry
C. Santinelli
Xavier Letartre
J. Tardy
P. Viktorovitch
G. Hollinger
M. Ambri
M. Pitaval
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Citations (19)
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