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S. B. Samavedam

5

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216

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Characteristics of atomic-layer-deposited thin HfxZr1−xO2 gate dielectrics

2007 Journal of Vacuum Science & Technology B
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Elevated source drain devices using silicon selective epitaxial growth

2000 Journal of Vacuum Science & Technology B
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Relaxation of strained Si layers grown on SiGe buffers

1999 Journal of Vacuum Science & Technology B
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Citations (67)