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Marjorie Hesse
Marjorie Hesse
STMicroelectronics
Electronic engineering
Computer science
Oxide
Annealing (metallurgy)
Threshold voltage
3
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1
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0
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Morphology and reliability aspects of 40 nm eSTM™ architecture
2021
Microelectronics Reliability
Franck Melul
Vincenzo Della Marca
Marc Bocquet
Madjid Akbal
Pierre Laine
Frederique Trenteseaux
M. Mantelli
Marjorie Hesse
Arnaud Regnier
Stephan Niel
Francesco La Rosa
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Développement de nouvelles architectures mémoires non-volatiles embarquées pour les plateformes technologiques avancées 40nm et 28nm
2019
Marjorie Hesse
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Impact of CMOS post nitridation annealing on reliability of 40nm 512kB embedded Flash array
2017
IIRW | International Integrated Reliability Workshop
Thibault Kempf
Marc Mantelli
Francois Maugain
Arnaud Regnier
Jean Michel Portal
P. Masson
Jean-Michel Moragues
Marjorie Hesse
Vincenzo Della Marca
Franck Julien
Stephan Niel
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