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M. C. Hugon

University of Paris

15

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168

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Electrical properties of metal–insulator–semiconductor structures with silicon nitride dielectrics deposited by low temperature plasma enhanced chemical vapor deposition distributed electron cyclotron resonance

1997 Journal of Vacuum Science and Technology
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Plasma enhanced chemical vapour deposition of silica thin films in an integrated distributed electron cyclotron resonance reactor

1997 Thin Solid Films
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Electrical properties of silicon nitride films grown on a SiGe layer by distributed electron cyclotron resonance plasma-enhanced chemical vapor deposition

1997 Thin Solid Films
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Optical and Electrical Characterizations of Pzt Films With Different O/Pb Stoichiometry

1996 MRS Proceedings
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Effect of Electrodes on Crystallization and Electrical Properties of Ferroelectric Pzt Films Deposited by Rf Magnetron Sputtering

1996 MRS Proceedings
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Low temperature deposition of silicon nitride films by distributed electron cyclotron resonance plasma‐enhanced chemical vapor deposition

1995 Journal of Vacuum Science and Technology
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Physicochemical and Electrical Properties of RF Magnetron Sputtered Lead Zirconate Titanate Thin Films

1994 MRS Proceedings
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Comparison of SiO2 Thin Film Properties Deposited by Distributed Electron Cyclotron Resonance Plasma Using Two Different Oxidant Gases: N2O or O2

1993
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Highly stable sputtered NiInW refractory ohmic contact to n‐type GaAs

1992 Journal of Applied Physics
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Thermally stable low resistance ohmic contacts to n‐type gallium arsenide: Magnetron cathodic sputter‐deposited NiInW contacts

1991 Applied Physics Letters
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