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Carl Hoff

Fairchild Semiconductor International, Inc.

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Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers

2009 Materials Science Forum
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High Quality Uniform SiC Epitaxy for Power Device Applications

2007 Materials Science Forum
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Highly Uniform SiC Epitaxy for MESFET Fabrication

2006 Materials Science Forum
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High Quality Uniform Thick Epitaxy of 4H-SiC for High Power Device Applications

2006 MRS Proceedings
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High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor

2005 Materials Science Forum
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