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Ichirou Honma
Ichirou Honma
NEC
Analytical chemistry
Oxide
Inorganic chemistry
Adsorption
Partial pressure
5
Papers
55
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The parallel processing of EGS4 code on distributed memory scalar parallel computer:Intel Paragon XP/S15-256
1996
Hiroshi Takemiya
Hirofumi Ohta
Ichirou Honma
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Reactive Ion Etching of GalnP, GaAs, and AIGaAs
1995
Wataru Wakamiya
Yoshinori Tanaka
H. Kimura
H. Miyatake
Shinichi Satoh
Hisao Watanabe
R. J. Wilhelm
S. Ohnishi
Ichirou Honma
A. J. L. Sophie
Haruhiko Ono
C Vermeulen
L. E Tz
C. Werkhoven
Ernst Hendrik August Granneman
S. Verhaverbeke
M. Heyns
J. W Wu
C. Yo Chang
E. Y. Chang
S. H. Chang
K. C. Lin
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Influence of Water Adsorption/Desorption Processes on the Selectivity of Vapor HF Etching
1995
Journal of The Electrochemical Society
Hisao Watanabe
Hiroshi Kitajima
Ichirou Honma
Haruhiko Ono
R. J. Wilhelm
A. J. L. Sophie
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Citations (12)
Selective Etching of Phosphosilicate Glass with Low Pressure Vapor HF
1995
Journal of The Electrochemical Society
Hisao Watanabe
S. Ohnishi
Ichirou Honma
Hiroshi Kitajima
Haruhiko Ono
R. J. Wilhelm
A. J. L. Sophie
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Citations (26)
Hemispherical grained Si formation on in-situ phosphorus doped amorphous-Si electrode for 256 Mb DRAM's capacitor
1995
IEEE Transactions on Electron Devices
Hirohito Watanabe
Toru Tatsumi
S. Ohnishi
Hiroshi Kitajima
Ichirou Honma
Taeko Ikarashi
Haruhiko Ono
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Citations (17)
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