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M Koiizuka
M Koiizuka
Materials science
Epitaxy
Optoelectronics
Short-channel effect
Crystallography
3
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Technology Breakthrough of Low Temperature, Low Defect, and Low Cost SiGe Selective Epitaxial Growth (L3 SiGe SEG) Process for 45nm Node and Beyond
2007
Symposium on VLSI Technology
Yosuke Shimamune
Masafumi Fukuda
M Koiizuka
Akira Katakami
Akiyoshi Hatada
Kimimasa Ikeda
Yonggi Kim
Kazuhiko Kawamura
N. Tamura
Takehiro Mori
Akira Moriya
Yoshiaki Hashiba
Yoshiya Inokuchi
Yasuharu Kunii
Masataka Kase
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Technology Breakthrough of Low Temperature, Low Defect, and Low Cost SiGe Selective Epitaxial Growth (L3 SiGe SEG) Process for 45nm Node and Beyond
2007
Yosuke Shimamune
Masafumi Fukuda
M Koiizuka
Akira Katakami
Akiyoshi Hatada
Kimimasa Ikeda
Yonggi Kim
Kazuhiko Kawamura
N. Tamura
Takehiro Mori
Akira Moriya
Yoshiaki Hashiba
Yoshiya Inokuchi
Yasuharu Kunii
Masataka Kase
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30p-PS-25 Magnetic properties of DyAg_2Si_2
1992
M Koiizuka
M. Ohashi
H Yamauchi
H Onodera
Y Yamaguchi
S Funabashi
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