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Joocheol Jeong

Korea Polytechnic University

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Defect reduction in (11–22) semipolar GaN with embedded InN islands on m-plane sapphire

2013 Journal of Crystal Growth
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Growth of semipolar InGaN quantum well structure using self-organized nano-masks on m-sapphire.

2013 Journal of Nanoscience and Nanotechnology
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Improved performance of semi-polar (11-22) GaN-based light-emitting diodes grown on SiNx interlayer

2013 Journal of Crystal Growth
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Effect of defects on the luminescence in semipolar InGaN/GaN quantum wells on planar and patterned m‐plane sapphire substrate

2012 Physica Status Solidi (a)
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Citations (9)