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S. R. Omampuliyur

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CMOS Inverter Based on Gate-All-Around Silicon-Nanowire MOSFETs Fabricated Using Top-Down Approach

2007 IEEE Electron Device Letters
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Ultra-Narrow Silicon Nanowire Gate-All-Around CMOS Devices: Impact of Diameter, Channel-Orientation and Low Temperature on Device Performance

2006 IEDM | International Electron Devices Meeting
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