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Ron Zhang
Ron Zhang
Qualcomm
Electronic engineering
Logic gate
Engineering
Leakage (electronics)
Transistor
3
Papers
14
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0
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A dual core oxide 8T SRAM cell with low Vccmin and dual voltage supplies in 45nm triple gate oxide and multi Vt CMOS for very high performance yet low leakage mobile SoC applications
2010
VLSIT | Symposium on VLSI Technology
Ping Liu
Joseph Wang
Michael Phan
Manish Garg
Ron Zhang
Amer Cassier
Lew G. Chua-Eoan
Boris Andreev
Sebastien Weyland
Shashank Ekbote
Michael Han
J. Fischer
Geoffrey Yeap
Ping-Wei Wang
Quincy Li
C.S. Hou
S.B. Lee
Y.F. Wang
Shyue-Shyh Lin
M. Cao
Y. J. Mii
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Test Structure Design, Extraction, and Impact Study of FEOL Capacitance Parameters in Advanced 45nm Technology
2009
ICMTS | International Conference on Microelectronic Test Structures
Shashank Ekbote
Priyamvada Sadagopan
Ying Chen
Wing Sy
Ron Zhang
Michael Han
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Session details: Leakage-aware architectural synthesis
2007
ISLPED | International Symposium on Low Power Electronics and Design
Ron Zhang
Yung-Hsiang Lu
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