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Hideyuki Ura
Hideyuki Ura
Toshiba
Electrical engineering
Electronic engineering
MOSFET
Engineering
Impact ionization
3
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7
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800V Super Junction MOSFET (HV-DTMOS IV) with better trade-off between switching loss and dVDS/dt
2016
Hiroyuki Irifune
Hiroshi Ohta
Hiroaki Yamashita
Hideyuki Ura
Kenji Mii
Masato Nashiki
Naotsugu Kako
Tchouangue
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Suppression of switching loss dependence on charge imbalance of superjunction MOSFET
2015
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Hiroaki Yamashita
Hideyuki Ura
Syotaro Ono
Masato Nashiki
Kenji Mii
Wataru Saito
Jun Onodera
Yoshitaka Hokomoto
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Temperature dependence of single-event burnout for super junction MOSFET
2015
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Shunsuke Katoh
Eiji Shimada
Takayuki Yoshihira
Akihiro Oyama
Syotaro Ono
Hideyuki Ura
Gentaro Ookura
Wataru Saito
Yusuke Kawaguchi
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Citations (4)
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