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D. Lagarde
D. Lagarde
Institut national des sciences appliquées
Optoelectronics
Quantum well
Nuclear magnetic resonance
Physics
Pulsed laser
3
Papers
5
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0
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Single Events Induced By Heavy Ions and Laser Pulses in Silicon Schottky Diodes
2018
IEEE Transactions on Nuclear Science
M. Mauguet
D. Lagarde
Fabien Widmer
N. Chatry
X. Marie
E. Lorfevre
F. Bezerra
R. Marec
P. Calvel
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Citations (2)
Bismuth content dependence of the electron spin relaxation time in GaAsBi Epilayers and quantum well structures
2018
Semiconductor Science and Technology
Sawsen Azaizia
A. Balocchi
Simone Mazzucato
F. Cadiz
S Beato de Le Salle
H Lehec
D. Lagarde
Alexandre Arnoult
C. Fontaine
H. Carrère
X. Marie
T. Amand
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Citations (3)
Carrier dynamics in GaAsBi quantum wells
2016
NMDC | Nanotechnology Materials and Devices Conference
S. Azaizia
A. Balocchi
D. Lagarde
Alexandre Arnoult
X. Marie
C. Fontaine
H. Carrère
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