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Tatsuya Hirose

Fujitsu

84

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1059

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Experience in Using Jumihaidokuto and Orengedokuto for Skin Disorders Caused by Molecular Target Drugs

2020 Kampo Medicine
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Dynamic performances of GaN-HEMT on Si in cascode configuration

2014 APEC | Applied Power Electronics Conference
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モールド絶縁系における微小空気ギャップの絶縁特性（2）;モールド絶縁系における微小空気ギャップの絶縁特性（2）;Insulation Behavior of Small-air-gap for the Molded-insulation System (2)

2013
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600 V GaN HEMT on 6-inch Si substrate using Au-free Si-LSI process for power applications

2013 WiPDA | IEEE Workshop on Wide Bandgap Power Devices and Applications
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A 24 dB Gain 51–68 GHz Common Source Low Noise Amplifier Using Asymmetric-Layout Transistors

2012 IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
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Improvement of RF and Noise Characteristics Using a Cavity Structure in InAlAs/InGaAs HEMTs

2012 IEEE Transactions on Electron Devices
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Noise Figure Improvement in InP-Based HEMTs Using Wide Gate Head and Cavity Structure

2012 IEEE Electron Device Letters
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Noise properties of asymmetrically recessed InP-based HEMTs for low-noise amplifiers

2011 IPRM | International Conference on Indium Phosphide and Related Materials
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A 24 dB gain 51–68 GHz CMOS low noise amplifier using asymmetric-layout transistors

2010 ESSCIRC | European Solid-State Circuits Conference
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C-10-14 Improvement in Noise Figure of Wide-gate-head InP-based HEMTs with Cavity Structure

2010 International Conference on Indium Phosphide and Related Materials
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Citations (3)