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Georg Bruederl

Osram Opto Semiconductors GmbH

21

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240

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Angular resolved far-field dynamics of (Al,In)GaN laser diodes

2020
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GaInN laser diodes from 440 to 530nm: a performance study on single-mode and multi-mode R&D designs

2017 Proceedings of SPIE
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Recent advances in high power blue laser diodes

2017
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10.7 Gb/s WDM transmission over 100-m SI-POF with discrete multitone

2016 OFC | Optical Fiber Communication Conference
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An industry perspective on the optimization of InGaN lasers and LEDs via modeling

2011 NUSOD | International Conference on Numerical Simulation of Optoelectronic Devices
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Recent results of blue and green InGaN laser diodes for laser projection

2011 Proceedings of SPIE
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True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power on c-Plane GaN

2010 Applied Physics Express
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Enhancement in wafer bow of free-standing GaN substrates due to high-dose hydrogen implantation: implications for GaN layer transfer applications

2007 Semiconductor Science and Technology
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Procede de fabrication de puces a semi-conducteur

2004
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A method for producing semiconductor chips

2004
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