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Akanksha Rawat

Indian Institute of Technology Bombay

Dielectric
Analytical chemistry
Physics
X-ray photoelectron spectroscopy
Leakage (electronics)

4

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34

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Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO₂ as a Dielectric

2019 IEEE Transactions on Electron Devices
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Thermally Grown TiO 2 and Al 2 O 3 for GaN-Based MOS-HEMTs

2018 IEEE Transactions on Electron Devices
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