author-photo

Kjell S. Stolt

TRW Inc.

7

Papers

109

Citations

Citation Trend

Filter By

Papers (5) Sort By

Journal Conference Others

Effect of molecular‐beam epitaxy growth conditions on GaAs–AlGaAs heterojunction bipolar transistor performance: Beryllium incorporation and device reliability

1992 Journal of Vacuum Science & Technology B
Show All
- Source
- Cite
- Save
Citations (13)
MBE growth and characterization of lattice-matched and pseudomorphic InGaAs/InAlAs/InP HEMTs

1992 BADOOMANIOSP | Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels
Show All
- Source
- Cite
- Save
Citations (7)
High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping and InGaAs emitter contacts

1991 IEEE Electron Device Letters
Show All
- Source
- Cite
- Save
Citations (51)
GaAs HBT MMIC broadband amplifiers from DC to 20 GHz

1990 IEEE Control Systems Magazine
Show All
- Source
- Cite
- Save
Citations (14)
GaAs Heterojunction Bipolar Transistor (HBT) Device and IC Technology for High-Performance Analog/Microwave, Digital, and A/D Conversion Applications

1990 The Japan Society of Applied Physics
Show All
- Source
- Cite
- Save
Citations (5)