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Tobias Wecker

University of Paderborn

8

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40

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Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells

2018 Physica Status Solidi B-basic Solid State Physics
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Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures

2018 Journal of Luminescence
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Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures

2017 Journal of Crystal Growth
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Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al

2016 Japanese Journal of Applied Physics
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Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy

2016 Japanese Journal of Applied Physics
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Citations (8)