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F. Fasce
F. Fasce
Ansaldo STS
Semiconductor device
Thyristor
Diode
Electron beam processing
Electronic engineering
3
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3
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0
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Scanning Acoustic Microscopy as a Non-Destructive Technique for Process Monitoring of High Power Semiconductor Devices
1992
J. Attal
B Bianco
A. Cambiaso
D. E. Crees
P Dargent
F. Fasce
D. R. Newcombe
J. C. Noack
J.M. Saurel
M. Zambelli
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Current status and prospects of electron irradiation of power semiconductor devices in Italy
1990
International Journal of Radiation Applications and Instrumentation. Part C. Radiation Physics and Chemistry
P.G. Fuochi
E. Gombia
F. Fasce
B. Passerini
A. Martelli
M. Pasqualetti
Marco Portesine
M. Zambelli
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Analysis of the Modifications Induced by Electron Irradiation on the Electrical Characteristics of High Power GTOs
1989
ESSDERC | European Solid-State Device Research Conference
P.G. Fuochi
B. Passerini
F. Fasce
M. Zambelli
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