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K. Fehse
K. Fehse
Otto-von-Guericke University Magdeburg
Analytical chemistry
Metalorganic vapour phase epitaxy
Light-emitting diode
Optoelectronics
Chemistry
5
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213
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Metalorganic chemical vapor phase epitaxy and structural properties of Ga1-xPxN on GaN/Si(111) substrates
2006
Applied Physics A
K. Fehse
Armin Dadgar
Peter Veit
J. Bläsing
A. Krost
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Citations (3)
Impact of thermal annealing on the characteristics of InGaN/GaN LEDs on Si(1 1 1)
2004
Journal of Crystal Growth
K. Fehse
Armin Dadgar
A. Krtschil
T. Riemann
T. Hempel
J. Christen
A. Krost
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Citations (2)
MOCVD‐Grown InGaN/GaN MQW LEDs on Si(111)
2003
Physica Status Solidi (c)
M. Poschenrieder
K. Fehse
F. Schulz
J. Bläsing
H. Witte
A. Krtschil
Armin Dadgar
A. Diez
J. Christen
A. Krost
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Citations (4)
Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy masking
2002
Applied Physics Letters
Armin Dadgar
M. Poschenrieder
J. Bläsing
K. Fehse
A. Diez
A. Krost
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Citations (161)
Bright, Crack‐Free InGaN/GaN Light Emitters on Si(111)
2002
Physica Status Solidi (a)
Armin Dadgar
M. Poschenrieder
O. Contreras
J. Christen
K. Fehse
J. Bläsing
A. Diez
F. Schulze
T. Riemann
Fernando Ponce
A. Krost
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Citations (43)
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