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J. Schleife
J. Schleife
Optoelectronics
Physics
Gallium nitride
Sheet resistance
Ternary compound
3
Papers
6
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GaSb based Diode Lasers from 1850nm to 2900nm with improved Brightness
2014
ISLC | International Semiconductor Laser Conference
S. Hilzensauer
J. Schleife
Marc T. Kelemen
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Development of a 2-AlGaN/GaN hemt technology on sapphire and SiC for mm-wave high-voltage power applications
2003
Rudolf Kiefer
Rudiger Quay
Stefan Müller
T. Feltgen
B. Raynor
J. Schleife
Klaus Köhler
Hermann Massler
S. Ramberger
F. van Raay
Axel Tessmann
Michael Mikulla
G. Weimann
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Development of a 2″‐AlGaN/GaN HEMT technology on sapphire and SiC for mm‐wave high‐voltage power applications
2003
Physica Status Solidi (a)
R. Kiefer
R. Quay
S. Müller
T. Feltgen
B. Raynor
J. Schleife
K. Köhler
H. Massler
S. Ramberger
F. van Raay
A. Tessmann
M. Mikulla
G. Weimann
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Citations (6)
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