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Periyanayagam Gandhi Kallarasan
Periyanayagam Gandhi Kallarasan
Sophia University
Metalorganic vapour phase epitaxy
Epitaxy
Substrate (chemistry)
Optoelectronics
Laser
4
Papers
8
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1.5 μm GaInAsP Stripe Laser Comparison Between InP Substrate and Directly Bonded InP/Si Substrate
2018
CLEO | Conference on Lasers and Electro-Optics
Periyanayagam Gandhi Kallarasan
Naoki Kamada
Yuya Onuki
Kazuki Uchida
Hirokazu Sugiyama
Xu Han
Natsuki Hayasaka
Masaki Aikawa
Kazuhiko Shimomura
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親水性直接接合InP/Si基板上に成長したGaInAsP/InPレーザダイオード接合の温度依存性
2018
Japanese Journal of Applied Physics
Aikawa Masaki
Onuki Yuya
Hayasaka Natsuki
Nishiyama Tetsuo
Kamada Naoki
Han Xu
Periyanayagam Gandhi Kallarasan
Uchida Kazuki
Sugiyama Hirokazu
Shimomura Kazuhiko
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Citations (7)
Lasing characteristics of MOVPE grown 1.5μΜ GalnAsP LD using directly bonded InP/Si substrate
2017
Natsuki Hayasaka
Tetsuo Nishiyama
Yuya Onuki
Naoki Kamada
Xu Han
Periyanayagam Gandhi Kallarasan
Kazuki Uchida
Hirokazu Sugiyama
Masaki Aikawa
Kazuhiko Shimomura
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1.5 μm laser diode on InP/Si substrate by epitaxial growth using direct bonding method
2017
CLEO | Conference on Lasers and Electro-Optics
Periyanayagam Gandhi Kallarasan
Tetsuo Nishiyama
Naoki Kamada
Yuya Onuki
Kazuhiko Shimomura
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