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Tai-Ming Lin
Tai-Ming Lin
National Chiao Tung University
Analytical chemistry
High-electron-mobility transistor
Electron mobility
Electronic engineering
Wide-bandgap semiconductor
4
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18
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High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices
2016
Japanese Journal of Applied Physics
Yu-Sheng Chiu
Jen-Ting Liao
Yueh-Chin Lin
Shin-Chien Liu
Tai-Ming Lin
Hiroshi Iwai
Kuniyuki Kakushima
Edward Yi Chang
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Citations (3)
Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance
2014
Journal of Vacuum Science & Technology B
Yu-Sheng Chiu
Tai-Ming Lin
Hong Quan Nguyen
Yu Chen Weng
Chi Lang Nguyen
Yueh-Chin Lin
Hung-Wei Yu
Edward Yi Chang
Ching-Ting Lee
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Citations (8)
Growth and fabrication of AlGaN/GaN HEMT on SiC substrate
2012
ICSE | IEEE International Conference on Semiconductor Electronics
Yuen-Yee Wong
Yu-Sheng Chiu
Tien-Tung Luong
Tai-Ming Lin
Yen-Teng Ho
Yue Chin Lin
Edward Yi Chang
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Citations (6)
RF characteristics of AlGaN/GaN HEMTs under different temperatures
2012
ICSE | IEEE International Conference on Semiconductor Electronics
Yu-Sheng Chiu
Jui-Chien Huang
Tai-Ming Lin
Yu-Ting Chou
Chung-Yu Lu
Chia-Ta Chang
Edward Yi Chang
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Citations (1)
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