Old Web
English
Sign In
Acemap
>
authorDetail
>
M. A. di Forte-Poisson
M. A. di Forte-Poisson
Saitama University
Chemistry
Condensed matter physics
Annealing (metallurgy)
High-electron-mobility transistor
Resonance
5
Papers
54
Citations
0.00
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (3)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Evaluation of Thermal Versus Plasma-Assisted ALD Al 2 O 3 as Passivation for InAlN/AlN/GaN HEMTs
2015
IEEE Electron Device Letters
Anna Malmros
P. Gamarra
M. A. di Forte-Poisson
Hans Hjelmgren
C. Lacam
Mattias Thorsell
M. Tordjman
R. Aubry
Niklas Rorsman
Show All
Source
Cite
Save
Citations (17)
Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures
2015
Semiconductor Science and Technology
Johan Bergsten
Anna Malmros
M. Tordjman
P. Gamarra
C. Lacam
M. A. di Forte-Poisson
Niklas Rorsman
Show All
Source
Cite
Save
Citations (18)
A new realisation of Schottky diodes on n-type InP
1990
Semiconductor Science and Technology
C. Gaonach
S. Cassette
M. A. di Forte-Poisson
C. Brylinski
M Champagne
A. Tardella
Show All
Source
Cite
Save
Citations (8)
1