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Ansgar Laubsch

Osram Opto Semiconductors GmbH

22

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629

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Investigation of the carrier distribution in InGaN-based multi-quantum-well structures

2011 Physica Status Solidi (c)
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High-Power and High-Efficiency InGaN-Based Light Emitters

2010 IEEE Transactions on Electron Devices
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Recent progress in high efficiency InGaN LEDs

2010 CLEO | Conference on Lasers and Electro-Optics
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ZnO-GaN Hybrid Heterostructures as Potential Cost-Efficient LED Technology Low-temperature and low-cost chemical growth, using a combination of nanorods and conducting material, was used to fabricate efficient ZnO-based light-emitting diodes.

2010
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Bias dependent spatially resolved photoluminescence spectroscopy and photocurrent measurements of InGaN/GaN LED structures

2009 Physica Status Solidi (c)
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New developments in green LEDs

2009 Physica Status Solidi (a)
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Luminescence properties of thick InGaN quantum‐wells

2009 Physica Status Solidi (c)
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Multi-quantum well emission from blue InGaN-based laser

2008 ISLC | International Semiconductor Laser Conference
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Defect-related recombination in InGaN-lasers

2008 Physica Status Solidi (c)
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Measurement and simulation of the lateral mode profile of broad ridge 405 nm (Al,In)GaN laser diodes

2008
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Citations (6)