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Huang Pengcheng

National University of Defense Technology

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シームレスガードバンドを用いた大規模電荷共有緩和のシミュレーション研究【Powered by NICT】

2017 IEEE Transactions on Device and Materials Reliability
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65nmバルクCMOS技術における単一事象二重過渡とその井戸構造依存性により誘導される単事象アプセット【Powered by NICT】

2016 Science in China Series F: Information Sciences
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PABAM: A Physics-Based Analytical Model to Estimate Bipolar Amplification Effect Induced Collected Charge at Circuit Level

2015 IEEE Transactions on Device and Materials Reliability
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Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation

2015 Chinese Physics B
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Novel N-hit single event transient mitigation technique via open guard transistor in 65 nm bulk CMOS process

2013 Science China-technological Sciences
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