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Gesualdo Donnarumma

Vienna University of Technology

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Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation

2013
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Electrothermal analysis of In 0.12 Al 0.88 N/GaN HEMTs

2012 ASDAM | International Conference on Advanced Semiconductor Devices and Microsystems
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