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Xiang-Jun Shang

Chinese Academy of Sciences
University of Science and Technology of China

31

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222

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Symmetric Excitons in an (001)-Based InAs/GaAs Quantum Dot Near Si Dopant for Photon-Pair Entanglement

2021
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Wet-Etched Microlens Array for 200 nm Spatial Isolation of Epitaxial Single QDs and 80 nm Broadband Enhancement of Their Quantum Light Extraction.

2021 Nanomaterials
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Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode.

2020 Nanoscale Research Letters
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C2v and D3h symmetric InAs quantum dots on GaAs (001) substrate: Exciton emission and a defect field influence

2020 AIP Advances
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Quantum light source devices of In(Ga)As semiconductorself-assembled quantum dots

2019 Journal of Semiconductors
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Quantum frequency down-conversion of single photons at 1552 nm from single InAs quantum dot

2018 Chinese Physics B
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Intracavity Spontaneous Parametric Down-Conversion in Bragg Reflection Waveguide Edge Emitting Diode

2017 Chinese Physics Letters
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Self-assembled semiconductor quantum dots decorating the facets of GaAs nanowire for single-photon emission

2017 National Science Review
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Bright Single-Photon Source at 1.3 μm Based on InAs Bilayer Quantum Dot in Micropillar

2017 Nanoscale Research Letters
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Large optical Stark shifts in single quantum dots coupled to core–shell GaAs/AlGaAs nanowires

2017 Nanoscale
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