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Nayana Ramesh
Nayana Ramesh
Indian Institute of Science
High-electron-mobility transistor
Electronic engineering
Optoelectronics
Silicon
Materials science
4
Papers
12
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0
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(Invited) GaN Buried Channel Normally Off MOSHEMT: Design Optimization and Experimental Integration on Silicon Substrate
2018
Rohith Soman
Manish Sharma
Nayana Ramesh
Digbijoy N. Nath
Rangarajan Muralidharan
K. N. Bhat
Srinivasan Raghavan
Navakanta Bhat
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Trap assisted avalanche instability and safe operating area concerns in AlGaN/GaN HEMTs
2017
IRPS | International Reliability Physics Symposium
Bhawani Shankar
Ankit Soni
Manikant Singh
Rohith Soman
Hareesh Chandrasekar
Nagaboopathy Mohan
Neha Mohta
Nayana Ramesh
Shreesha Prabhu
Abhay Kulkarni
Digbijoy N. Nath
Rangarajan Muralidharan
K. N. Bhat
Srinivasan Raghavan
Navakant Bhat
Mayank Shrivastava
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Citations (8)
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